Sr Development Scientist

Reference: PR/584675_1782994005 OverviewOur client is a global semiconductor innovator developing next-generation Gallium Nitride (GaN) power technologies that are helping reshape power conversion across AI infrastructure, renewable energy, industrial automation, data centres, electric mobility and advanced robotics.As part of a growing wide-bandgap semiconductor team, you will play a key role in developing and optimising advanced GaN power devices, helping translate cutting-edge device physics into robust, scalable products used in real-world applications. This is an opportunity to work on complex technical challenges, influence future technology roadmaps and collaborate with leading experts across device development, process technology and product engineering.ResponsibilitiesLead the development and optimisation of advanced GaN power device architectures.Define device performance goals and balance trade-offs between performance, reliability and manufacturability.Drive TCAD simulation, modelling and device design activities to support technology and product development.Analyse device behaviour and identify opportunities to improve efficiency, robustness and overall performance.Collaborate closely with process integration, characterisation, reliability and product engineering teams.Support the industrialisation of new device concepts and technologies.Contribute technical expertise to strategic technology and product roadmaps.Lead complex technical projects and drive innovation within a multidisciplinary global environment.Mentor junior engineers and contribute to the growth of the wider engineering team.RequirementsMSc, PhD or equivalent in Semiconductor Physics, Electrical Engineering, Microelectronics or a related discipline.Proven experience developing semiconductor devices, ideally within GaN, SiC or other wide-bandgap technologies.Strong understanding of semiconductor device physics and power semiconductor design.Hands-on experience with TCAD simulation tools and device modelling.Experience optimising device performance, reliability and manufacturability.Ability to solve complex technical challenges using both analytical and simulation-based approaches.Experience working across multidisciplinary teams including process, reliability and product engineering.Strong communication skills and ability to influence technical decisions.Highly DesirableDirect experience with GaN power devices.Experience with HEMT structures, p-GaN, e-mode or other advanced GaN technologies.Knowledge of GaN-on-Silicon or other wide-bandgap process technologies.Experience supporting technology transfer or industrialisation activities.Understanding of device reliability mechanisms and failure analysis.Experience leading technical projects within a semiconductor R&D environment.Benefits Work on some of the most exciting technologies within the rapidly growing GaN semiconductor market.Directly influence the development of next-generation power devices and future product roadmaps.Collaborate with recognised experts in semiconductor technology and power electronics.Join a growing team solving complex engineering challenges with real-world impact.Exposure to applications including AI infrastructure, renewable energy, industrial automation and electrification.Flexible working arrangements that promote a healthy work-life balance.Competitive salary and comprehensive benefits package.Ongoing training, technical development and career progression opportunities.Opportunity to work within an international engineering environment at the forefront of wide-bandgap innovation.